Quality evaluation for microcrystalline silicon thin-film solar cells by single-layer absorption

The absorption coefficient at 1.4eV is divided by the value at 0.9eV to obtain the factor used to judge the quality of μc-Si:H. PV device performance can be predicted by multiplying V_oc with I_scwhen using this layer as an intrinsic layer. The results show a good relationship between the quality factor and the product of open-circuit voltage and short-circuit current. However, the final efficiency is influenced by the identities of the interface in the multilayer structure.