Q-band low noise amplifiers using a 0.15-μm MHEMT process for broadband communication and radio astronomy applications

Shou Hsien Weng, Chi Hsien Lin, Hong Yeh Chang, Chau Ching Chiong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

Two Q-band low noise amplifiers using a 0.15-μm InGaAs MHEMT process for broadband communication and radio astronomy applications are presented in this paper. Between 37 and 53 GHz, the LNA1 features a small signal gain of higher than 31 dB, a noise figure of better than 3.5 dB with a minimum noise figure of 2.8 dB at 44 GHz, and a gain-bandwidth product (GBP) of 679 GHz. Between 32 and 50 GHz, the LNA2 features a small signal gain of higher than 28 dB, a noise figure of better than 3.2 dB with a minimum noise figure of 2.6 dB at 44 GHz, and a GBP of 569 GHz. The chip sizes of the LNA1 and LNA2 are both 2×1 mm2. The LNAs demonstrate broad bandwidth, high gain, low noise figure, and compact chip size, and they will be further applied to a few broadband receivers for communications and radio astronomy applications. Moreover, this work demonstrates the highest GBP among all the reported Q-band LNAs.

Original languageEnglish
Title of host publication2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Pages455-458
Number of pages4
DOIs
StatePublished - 2008
Event2008 IEEE MTT-S International Microwave Symposium Digest, MTT - Atlanta, GA, United States
Duration: 15 Jun 200820 Jun 2008

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Country/TerritoryUnited States
CityAtlanta, GA
Period15/06/0820/06/08

Keywords

  • Broadband
  • High gain
  • InGaAs
  • Low noise figure
  • MHEMT

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