Pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence properties

Huai Chung Chen; Chun Wen Wang; Sheng Wei Lee; Lih Juann Chen

doi:10.1002/adma.200501691

Pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence properties

Huai Chung Chen, Chun Wen Wang, Sheng Wei Lee, Lih Juann Chen

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	Advanced Materials
Volume	18
Issue number	3
DOIs	https://doi.org/10.1002/adma.200501691
State	Published - 3 Feb 2006

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abstract = "A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.",

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AU - Chen, Huai Chung

AU - Wang, Chun Wen

AU - Lee, Sheng Wei

AU - Chen, Lih Juann

PY - 2006/2/3

Y1 - 2006/2/3

N2 - A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.

AB - A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.

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JO - Advanced Materials

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Pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence properties

Abstract

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