Abstract
A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.
Original language | English |
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Pages (from-to) | 367-370 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 18 |
Issue number | 3 |
DOIs | |
State | Published - 3 Feb 2006 |