Pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence properties

Huai Chung Chen, Chun Wen Wang, Sheng Wei Lee, Lih Juann Chen

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalAdvanced Materials
Volume18
Issue number3
DOIs
StatePublished - 3 Feb 2006

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