A method to develop pyramid-shaped Si/Ge superlattice quantum dots with enhanced photoluminescence (PL) properties and excellent uniformity over large areas was presented. The fabrication process is compatible with the Si/SiGe based integrated circuit technology. It was observed that these nanodots exhibited an approximately ten fold increase in PL over conventional Si/Ge SL heterostructures. The results show that the enhancement in photoluminescence can be attributed to quantum confinement effects.
|Number of pages||4|
|State||Published - 3 Feb 2006|