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Proton irradiation effects on Sb-based heterojunction bipolar transistors
C. F. Lo
, H. Y. Kim
, J. Kim
, Shu Han Chen
, Sheng Yu Wang
,
Jen Inn Chyi
, B. Y. Chou
, K. H. Chen
, Y. L. Wang
, C. Y. Chang
, S. J. Pearton
, L. I. Kravchenko
, S. Jang
, F. Ren
Center for Advanced Science and Technology
Department of Electrical Engineering
Optical Sciences Center
Research output
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Contribution to journal
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Article
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peer-review
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Keyphrases
Heterojunction Bipolar Transistors
100%
Double Heterojunction Bipolar Transistor
100%
Proton Irradiation Effects
100%
Leakage Current
66%
Generation-recombination
66%
Current Gain
33%
Proton
33%
MeV Protons
33%
Output Current
33%
InAlAs
33%
InGaAs
33%
InGaSb
33%
Ideality Factor
33%
Low Earth Orbit
33%
Output Conductance
33%
Space Industry
33%
Industry Applications
33%
Nuclear Industry
33%
Years of Exposure
33%
Minimal Change
33%
Earth and Planetary Sciences
Heterojunctions
100%
Bipolar Transistor
100%
Proton Irradiation
100%
Low Earth Orbit
25%
Emitter
25%
Fluence
25%
Physics
Bipolar Transistor
100%
Heterojunctions
100%
Proton Irradiation
100%
Earth Orbit
25%
Fluence
25%
Engineering
Heterojunctions
100%
Bipolar Transistor
100%
Current Gain
25%
Current Output
25%
Indium Gallium Arsenide
25%
Collector Junction
25%
Ideality Factor
25%
Low Earth Orbit
25%
Material Science
Heterojunction
100%
Bipolar Transistor
100%
Proton Irradiation
100%
Indium Gallium Arsenide
25%