Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

M. Hong; K. A. Anselm; J. Kwo; H. M. Ng; J. N. Baillargeon; A. R. Kortan; J. P. Mannaerts; A. Y. Cho; C. M. Lee; J. I. Chyi; T. S. Lay

doi:10.1116/1.591402

Properties of Ga₂O₃(Gd₂O₃)/GaN metal-insulator-semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Ga₂O₃(Gd₂O₃)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga₂O₃(Gd₂O₃) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

Original language	English
Pages (from-to)	1453-1456
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591402
State	Published - May 2000

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title = "Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes",

abstract = "Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.",

author = "M. Hong and Anselm, {K. A.} and J. Kwo and Ng, {H. M.} and Baillargeon, {J. N.} and Kortan, {A. R.} and Mannaerts, {J. P.} and Cho, {A. Y.} and Lee, {C. M.} and Chyi, {J. I.} and Lay, {T. S.}",

year = "2000",

month = may,

doi = "10.1116/1.591402",

language = "???core.languages.en_GB???",

volume = "18",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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Properties of Ga₂O₃(Gd₂O₃)/GaN metal-insulator-semiconductor diodes. / Hong, M.; Anselm, K. A.; Kwo, J.; Ng, H. M.; Baillargeon, J. N.; Kortan, A. R.; Mannaerts, J. P.; Cho, A. Y.; Lee, C. M.; Chyi, J. I.; Lay, T. S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1453-1456.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

AU - Hong, M.

AU - Anselm, K. A.

AU - Kwo, J.

AU - Ng, H. M.

AU - Baillargeon, J. N.

AU - Kortan, A. R.

AU - Mannaerts, J. P.

AU - Cho, A. Y.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Lay, T. S.

PY - 2000/5

Y1 - 2000/5

N2 - Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

AB - Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

UR - http://www.scopus.com/inward/record.url?scp=0034350479&partnerID=8YFLogxK

U2 - 10.1116/1.591402

DO - 10.1116/1.591402

M3 - 期刊論文

AN - SCOPUS:0034350479

VL - 18

SP - 1453

EP - 1456

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -

Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

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Properties of Ga₂O₃(Gd₂O₃)/GaN metal-insulator-semiconductor diodes