Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


Ga2O3(Gd2O3)/GaN MOS diodes with significantly improved capacitance-voltage and current-voltage characteristics are demonstrated. The GaN epilayers with Ga polarity were grown by molecular beam epitaxy on C-plane (0001) sapphire substrates, backside-coated with Ti. Ga2O3(Gd2O3) effectively passivates GaN with a low interfacial density of states. In situ deposition without contamination could provide better interfacial properties in terms of electrical and structural characteristics. The interface and the integrity of the oxide remained intact upon rapid thermal annealing up to 950 °C.

Original languageEnglish
Pages (from-to)1453-1456
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - May 2000


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