Properties and effects of hydrogen in GaN

S. J. Pearton; H. Cho; F. Ren; J. I. Chyi; J. Han; R. G. Wilson

Properties and effects of hydrogen in GaN

S. J. Pearton, H. Cho, F. Ren, J. I. Chyi, J. Han, R. G. Wilson

Research output: Contribution to journal › Conference article › peer-review

Abstract

The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H₂ formation probability.

Original language	English
Pages (from-to)	W10.6.1 - W10.6.10
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 28 Nov 1999 → 3 Dec 1999

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title = "Properties and effects of hydrogen in GaN",

abstract = "The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.",

author = "Pearton, {S. J.} and H. Cho and F. Ren and Chyi, {J. I.} and J. Han and Wilson, {R. G.}",

note = "Funding Information: The work at UF is partially supported by grants from DARPA/EPRI, MDA 972-98-1-0006, monitored by ONR (J.C. Zolper) and NSF 97-32865 (L. Hess). The work at NCU is partially supported by a grant from the National Science Council of R.O.C. under contract No. NSC-88-2215-E-008-012. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockhead-Martin Company, for the US Department of Energy under contract No. DEAC04-94-AL85000. The work of RGW is partially supported by ARL (J.M. Zavada).; The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

year = "2000",

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volume = "595",

pages = "W10.6.1 -- W10.6.10",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Properties and effects of hydrogen in GaN

AU - Pearton, S. J.

AU - Cho, H.

AU - Ren, F.

AU - Chyi, J. I.

AU - Han, J.

AU - Wilson, R. G.

N1 - Funding Information: The work at UF is partially supported by grants from DARPA/EPRI, MDA 972-98-1-0006, monitored by ONR (J.C. Zolper) and NSF 97-32865 (L. Hess). The work at NCU is partially supported by a grant from the National Science Council of R.O.C. under contract No. NSC-88-2215-E-008-012. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockhead-Martin Company, for the US Department of Energy under contract No. DEAC04-94-AL85000. The work of RGW is partially supported by ARL (J.M. Zavada).

PY - 2000

Y1 - 2000

N2 - The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

AB - The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

UR - http://www.scopus.com/inward/record.url?scp=0033701755&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0033701755

SN - 0272-9172

VL - 595

SP - W10.6.1 - W10.6.10

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -

Properties and effects of hydrogen in GaN

Abstract

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