The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.
|Pages (from-to)||W10.6.1 - W10.6.10|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2000|
|Event||The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA|
Duration: 28 Nov 1999 → 3 Dec 1999