Progress on InAs-based quantum dot light emitters

Jen Inn Chyi; Wei Sheng Liu; Tung Po Hsieh; Tzu Min Hsu; Wen Hao Chang; Wen Yen Chen; Hsiang Szu Chang

Progress on InAs-based quantum dot light emitters

Jen Inn Chyi, Wei Sheng Liu, Tung Po Hsieh, Tzu Min Hsu, Wen Hao Chang, Wen Yen Chen, Hsiang Szu Chang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
Publisher	Electrochemical Society Inc.
Pages	1-6
Number of pages	6
Edition	2
ISBN (Electronic)	9781607685395
State	Published - 2006
Event	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States Duration: 16 Oct 2005 → 21 Oct 2005

Publication series

Name	ECS Transactions
Number	2
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	16/10/05 → 21/10/05

Cite this

Chyi, J. I., Liu, W. S., Hsieh, T. P., Hsu, T. M., Chang, W. H., Chen, W. Y., & Chang, H. S. (2006). Progress on InAs-based quantum dot light emitters. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (2 ed., pp. 1-6). (ECS Transactions; Vol. 1, No. 2). Electrochemical Society Inc..

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title = "Progress on InAs-based quantum dot light emitters",

abstract = "We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.",

author = "Chyi, {Jen Inn} and Liu, {Wei Sheng} and Hsieh, {Tung Po} and Hsu, {Tzu Min} and Chang, {Wen Hao} and Chen, {Wen Yen} and Chang, {Hsiang Szu}",

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booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",

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note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

}

Chyi, JI, Liu, WS, Hsieh, TP, Hsu, TM, Chang, WH, Chen, WY & Chang, HS 2006, Progress on InAs-based quantum dot light emitters. in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 edn, ECS Transactions, no. 2, vol. 1, Electrochemical Society Inc., pp. 1-6, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 16/10/05.

Progress on InAs-based quantum dot light emitters. / Chyi, Jen Inn; Liu, Wei Sheng; Hsieh, Tung Po et al.
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. p. 1-6 (ECS Transactions; Vol. 1, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.

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Progress on InAs-based quantum dot light emitters

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