Processing and device performance of GaN power rectifiers

A. P. Zhang, G. T. Dang, X. A. Cao, H. Cho, F. Ren, J. Han, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, S. N.G. Chu, R. G. Wilson, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω-cm-2.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
DOIs
StatePublished - 2000

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