Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

Xuguang Wang; Jie Zhu; Hongzhou Zhang; Tai Chou Lee; Trinh Vo; Thomas A. Rabson; Marc A. Robert

doi:10.1080/10584580108010840

Processing and characterization of LiNbO₃ thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

Xuguang Wang, Jie Zhu, Hongzhou Zhang, Tai Chou Lee, Trinh Vo, Thomas A. Rabson, Marc A. Robert

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

Original language	English
Pages (from-to)	171-180
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	40
Issue number	1-5
DOIs	https://doi.org/10.1080/10584580108010840
State	Published - 2001
Event	13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States Duration: 11 Mar 2006 → 14 Mar 2006

Keywords

C-V
LiNbO
MFSFET
P-V

Access to Document

10.1080/10584580108010840

Cite this

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title = "Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application",

abstract = "LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.",

keywords = "C-V, LiNbO, MFSFET, P-V",

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TY - JOUR

T1 - Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

AU - Wang, Xuguang

AU - Zhu, Jie

AU - Zhang, Hongzhou

AU - Lee, Tai Chou

AU - Vo, Trinh

AU - Rabson, Thomas A.

AU - Robert, Marc A.

PY - 2001

Y1 - 2001

N2 - LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

AB - LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

KW - C-V

KW - LiNbO

KW - MFSFET

KW - P-V

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DO - 10.1080/10584580108010840

M3 - 會議論文

AN - SCOPUS:34547752936

SN - 1058-4587

VL - 40

SP - 171

EP - 180

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-5

T2 - 13th International Symposium on Integrated Ferroelectrics

Y2 - 11 March 2006 through 14 March 2006