Processing and characterization of LiNbO3 thin film for metal ferroelectric semiconductor field effect transistor (MFSFET) application

Xuguang Wang, Jie Zhu, Hongzhou Zhang, Tai Chou Lee, Trinh Vo, Thomas A. Rabson, Marc A. Robert

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.

Original languageEnglish
Pages (from-to)171-180
Number of pages10
JournalIntegrated Ferroelectrics
Volume40
Issue number1-5
DOIs
StatePublished - 2001
Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
Duration: 11 Mar 200614 Mar 2006

Keywords

  • C-V
  • LiNbO
  • MFSFET
  • P-V

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