LiNbO3 thin films were deposited on P-Si(111) substrates. C-axis (006) oriented films were fabricated with RF magnetron sputtering and (012) oriented films were achieved by metal organic decomposition (MOD). High frequency C-V measurement showed a clockwise rotation hysteresis curve, which corresponded to the ferroelectric switching. A polarization vs. voltage hysteresis curve of a Metal-Ferroelectric-Semiconductor (MFS) capacitor was measured with a modified Sawyer-Tower circuit. Remnant polarization as high as 65C/cm2 was found from sputtering deposited sample.
|Number of pages||10|
|State||Published - 2001|
|Event||13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States|
Duration: 11 Mar 2006 → 14 Mar 2006