Probing substrate influence on graphene by fitting Raman signals with Voigt profile

Vi Min Liu, Cheng Wen Huang, Bing Jie Lin, Hsing Ying Lin, Chen Han Huang, Fu Yu Shih, Wei Hua Wang, Chih Yi Liu, Hsiang Chen Chui

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We provide a new approach to identify the substrate influence and doping effect on graphene surface. In this work, the Raman bandwidths of G bands were fitted into the Voigt profile. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibit a much greater Gaussian bandwidths of than supported graphene. It reveals the doping effect on supported graphene is stronger than that of suspended graphene. We also analyze the peak-positions of G bands, and I2D/IG ratios. For the suspended graphene, the peak positions of G band are downshifted respect to supported graphene, and the I2D/IG ratios of suspended graphene are larger than those of supported graphene.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th Microoptics Conference, MOC 2013
StatePublished - 2013
Event2013 18th Microoptics Conference, MOC 2013 - Tokyo, Japan
Duration: 27 Oct 201330 Oct 2013

Publication series

NameTechnical Digest of the 18th Microoptics Conference, MOC 2013

Conference

Conference2013 18th Microoptics Conference, MOC 2013
Country/TerritoryJapan
CityTokyo
Period27/10/1330/10/13

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