Principles and applications of Ig-RTN in Nano-scaled MOSFET

Principles and applications of I_g-RTN in Nano-scaled MOSFET

Steve S. Chung, E. R. Hsieh

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Scopus citations

Original language	English
Title of host publication	Noise in Nanoscale Semiconductor Devices
Publisher	Springer International Publishing
Pages	175-200
Number of pages	26
ISBN (Electronic)	9783030375003
ISBN (Print)	9783030374990
DOIs	https://doi.org/10.1007/978-3-030-37500-3_5
State	Published - 26 Apr 2020

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