Prevention of electromigration-induced Cu pad dissolution by using a high electromigration-resistance ternary Cu-Ni-Sn layer

Y. H. Hsiao, Y. C. Chuang, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Electromigration-induced Cu dissolution occurred at serious levels on the Cu pad under 104 A/cm2 current-stressing for 20 h at 160 °C. A high electromigration-resistance (Cu, Ni)6Sn5 layer, which converted from a thin Ni layer on the Cu pad, effectively prevented the Cu pad from dissolving into the pure Sn bump under 104 A/cm 2 current-stressing for 30 h at 160 °C.

Original languageEnglish
Pages (from-to)661-664
Number of pages4
JournalScripta Materialia
Volume54
Issue number4 SPEC. ISS.
DOIs
StatePublished - Feb 2006

Keywords

  • Soldering

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