Preparation of TiO                         2                         -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas

Jeng Lin Chung; Jyh Chen Chen; Chung Jen Tseng

doi:10.1016/j.apsusc.2008.07.125

Preparation of TiO ₂ -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas

Jeng Lin Chung, Jyh Chen Chen, Chung Jen Tseng

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Highly conductive, transparent TiO ₂ -doped ZnO films are grown by radio frequency (RF) magnetron sputtering in ambient hydrogen-argon (Ar + H ₂ ) gas at a temperature of 150 °C and the effects of the Ti and H ₂ content on the structural, electrical, and optical properties of these TiO ₂ -doped ZnO films are subsequently investigated. X-ray photoelectron spectroscopy examination indicates that the variation of the H ₂ content in Ar has an influence upon the chemical state of the films. The X-ray diffraction spectra indicate that all the samples are polycrystalline ZnO films oriented perpendicular to the substrate surface (c-axis orientation). The lowest resistivity, 6.50 × 10 ^-4 Ω cm, is obtained with 1.28 wt.% Ti and H ₂ content in a 15% Ar ambient. The optical transmittance for TiO ₂ -doped ZnO films in the visible region is about 85%. Due to the Burstein-Moss effect, the energy band gap increases with the carrier concentration.

Original language	English
Pages (from-to)	2494-2499
Number of pages	6
Journal	Applied Surface Science
Volume	255
Issue number	5 PART 1
DOIs	https://doi.org/10.1016/j.apsusc.2008.07.125
State	Published - 30 Dec 2008

Keywords

Energy band gap
Hydrogen
Resistivity
Sputtering
Zinc oxide

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10.1016/j.apsusc.2008.07.125

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title = " Preparation of TiO 2 -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas ",

abstract = " Highly conductive, transparent TiO 2 -doped ZnO films are grown by radio frequency (RF) magnetron sputtering in ambient hydrogen-argon (Ar + H 2 ) gas at a temperature of 150 °C and the effects of the Ti and H 2 content on the structural, electrical, and optical properties of these TiO 2 -doped ZnO films are subsequently investigated. X-ray photoelectron spectroscopy examination indicates that the variation of the H 2 content in Ar has an influence upon the chemical state of the films. The X-ray diffraction spectra indicate that all the samples are polycrystalline ZnO films oriented perpendicular to the substrate surface (c-axis orientation). The lowest resistivity, 6.50 × 10 -4 Ω cm, is obtained with 1.28 wt.% Ti and H 2 content in a 15% Ar ambient. The optical transmittance for TiO 2 -doped ZnO films in the visible region is about 85%. Due to the Burstein-Moss effect, the energy band gap increases with the carrier concentration.",

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Preparation of TiO ₂ -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas . / Chung, Jeng Lin; Chen, Jyh Chen ; Tseng, Chung Jen.
In: Applied Surface Science, Vol. 255, No. 5 PART 1, 30.12.2008, p. 2494-2499.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Preparation of TiO 2 -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas

AU - Chung, Jeng Lin

AU - Chen, Jyh Chen

AU - Tseng, Chung Jen

PY - 2008/12/30

Y1 - 2008/12/30

N2 - Highly conductive, transparent TiO 2 -doped ZnO films are grown by radio frequency (RF) magnetron sputtering in ambient hydrogen-argon (Ar + H 2 ) gas at a temperature of 150 °C and the effects of the Ti and H 2 content on the structural, electrical, and optical properties of these TiO 2 -doped ZnO films are subsequently investigated. X-ray photoelectron spectroscopy examination indicates that the variation of the H 2 content in Ar has an influence upon the chemical state of the films. The X-ray diffraction spectra indicate that all the samples are polycrystalline ZnO films oriented perpendicular to the substrate surface (c-axis orientation). The lowest resistivity, 6.50 × 10 -4 Ω cm, is obtained with 1.28 wt.% Ti and H 2 content in a 15% Ar ambient. The optical transmittance for TiO 2 -doped ZnO films in the visible region is about 85%. Due to the Burstein-Moss effect, the energy band gap increases with the carrier concentration.

AB - Highly conductive, transparent TiO 2 -doped ZnO films are grown by radio frequency (RF) magnetron sputtering in ambient hydrogen-argon (Ar + H 2 ) gas at a temperature of 150 °C and the effects of the Ti and H 2 content on the structural, electrical, and optical properties of these TiO 2 -doped ZnO films are subsequently investigated. X-ray photoelectron spectroscopy examination indicates that the variation of the H 2 content in Ar has an influence upon the chemical state of the films. The X-ray diffraction spectra indicate that all the samples are polycrystalline ZnO films oriented perpendicular to the substrate surface (c-axis orientation). The lowest resistivity, 6.50 × 10 -4 Ω cm, is obtained with 1.28 wt.% Ti and H 2 content in a 15% Ar ambient. The optical transmittance for TiO 2 -doped ZnO films in the visible region is about 85%. Due to the Burstein-Moss effect, the energy band gap increases with the carrier concentration.

KW - Energy band gap

KW - Hydrogen

KW - Resistivity

KW - Sputtering

KW - Zinc oxide

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M3 - 期刊論文

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SN - 0169-4332

VL - 255

SP - 2494

EP - 2499

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5 PART 1

ER -

Preparation of TiO 2 -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas

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Keywords

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Preparation of TiO ₂ -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas