Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method

Meng Chi Li; Chien Cheng Kuo; Ssu Hsiang Peng; Sheng Hui Chen; Cheng Chung Lee

doi:10.1143/JJAP.51.025504

Preparation of low resistivity transparent conductive Nb-doped TiO ₂ films by the co-sputtering method

Meng Chi Li, Chien Cheng Kuo, Ssu Hsiang Peng, Sheng Hui Chen, Cheng Chung Lee

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Low resistivity Nb-doped TiO ₂ transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55 × 10 ^-4 Ωcm at 24W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photocatalyst.

Original language	English
Article number	025504
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	2 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.025504
State	Published - Feb 2012

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title = "Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method",

abstract = "Low resistivity Nb-doped TiO 2 transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55 × 10 -4 Ωcm at 24W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photocatalyst.",

author = "Li, {Meng Chi} and Kuo, {Chien Cheng} and Peng, {Ssu Hsiang} and Chen, {Sheng Hui} and Lee, {Cheng Chung}",

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T1 - Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method

AU - Li, Meng Chi

AU - Kuo, Chien Cheng

AU - Peng, Ssu Hsiang

AU - Chen, Sheng Hui

AU - Lee, Cheng Chung

PY - 2012/2

Y1 - 2012/2

N2 - Low resistivity Nb-doped TiO 2 transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55 × 10 -4 Ωcm at 24W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photocatalyst.

AB - Low resistivity Nb-doped TiO 2 transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55 × 10 -4 Ωcm at 24W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photocatalyst.

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DO - 10.1143/JJAP.51.025504

M3 - 期刊論文

AN - SCOPUS:84863149421

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 PART 1

M1 - 025504

ER -

Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method

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Preparation of low resistivity transparent conductive Nb-doped TiO ₂ films by the co-sputtering method