Preparation of low resistivity transparent conductive Nb-doped TiO 2 films by the co-sputtering method

Meng Chi Li, Chien Cheng Kuo, Ssu Hsiang Peng, Sheng Hui Chen, Cheng Chung Lee

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Low resistivity Nb-doped TiO 2 transparent conducting oxide (TNO) thin films have been achieved by a pulsed dc magnetron co-sputtering at room temperature and the annealing treatment. Pulsed dc power provides the stabilization of reactive sputtering. The dc power of Nb target is controlled to find the optimum Nb content in TNO films. The carrier concentration is linearly proportional to Nb content in TNO films. The lowest resistivity was measured as 4.55 × 10 -4 Ωcm at 24W dc power of Nb and the average absorbance in the visible light region was smaller than 8% for different dc powers. The results of contact angle revealed that TNO films still keep the surface hydrophilicity and have the characteristic of photocatalyst.

Original languageEnglish
Article number025504
JournalJapanese Journal of Applied Physics
Issue number2 PART 1
StatePublished - Feb 2012


Dive into the research topics of 'Preparation of low resistivity transparent conductive Nb-doped TiO <sub>2</sub> films by the co-sputtering method'. Together they form a unique fingerprint.

Cite this