Keyphrases
Interfacial Trap Density
100%
GaSb
100%
MOS Capacitor
100%
Metal-oxide-semiconductor Capacitor (MOSCAP)
42%
In Situ Techniques
28%
Dielectric Deposition
28%
Capacitance-voltage
14%
Room Temperature
14%
In Situ
14%
Aluminum Oxide
14%
Electrical Properties
14%
Band Gap
14%
P-channel
14%
Hydrogen Plasma
14%
Fermi Level
14%
MOSFET
14%
Valence Band
14%
Surface Treatment
14%
Gate Leakage Current
14%
Valence
14%
HfO2
14%
Oxide-free
14%
High-k Dielectric
14%
Complementary MOS
14%
Conductance Method
14%
Native Oxide
14%
MOS Integrated Circuits
14%
Material Science
Density
100%
Capacitor
100%
Surface (Surface Science)
100%
Metal Oxide
75%
Oxide Semiconductor
75%
Dielectric Material
50%
Oxide Compound
25%
Capacitance
25%
Al2O3
25%
Electronic Circuit
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Physics
Metal Oxide Semiconductor
100%
Dielectric Material
66%
Room Temperature
33%
Integrated Circuit
33%
Hydrogen Plasma
33%
Field Effect Transistor
33%
Capacitance-Voltage Characteristics
33%
Electrical Property
33%
Engineering
Metal Oxide Semiconductor
100%
Dielectrics
66%
Room Temperature
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Valence Band
33%
Integrated Circuit
33%
Band Gap
33%
Fermi Level
33%