Preparation of GaSb surface for low interfacial trap density MOS capacitors

Cheng Yu Chen, Wei Jen Hsueh, Chao Min Chang, Hsien Ming Hsu, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The effects of in-situ and ex-situ surface treatments on the electrical properties of GaSb metal-oxide-semiconductor capacitors (MOSCAPs) are compared and investigated. The in-situ approach can provide a native oxide-free GaSb surface subsequent high-κ dielectric deposition. HfO2/Al2O3/p-GaSb MOSCAPs fabricated on an Sb-stabilized surface exhibit clear inversion at low frequency and good modulation of the Fermi level across the whole GaSb band gap. The interfacial trap density (Dit) extracted by the conductance method is about 7.6×1011 cm-2eV-1 near the valence band. As to the ex-situ process, the air-exposed GaSb samples are treated by hydrogen plasma at room temperature prior to dielectric deposition. The capacitance-voltage (C-V) characteristics and gate leakage currents are comparable to those of the MOSCAPs prepared by in-situ method. Dit near the valence as low as 6.0×1011 cm-2eV-1is obtained, indicating the feasibility of using GaSb p-channel MOSFETs for future complementary MOS integrated circuits.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
EditorsY. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, J. K. Hite
PublisherElectrochemical Society Inc.
Pages3-9
Number of pages7
Edition7
ISBN (Electronic)9781607685975
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number7
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period24/05/1528/05/15

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