Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

Kong Wei Cheng, Chao Ming Huang, Guan Ting Pan, Wen Sheng Chang, Tai Chou Lee, Thomas C.K. Yang

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Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

Original languageEnglish
Pages (from-to)1264-1270
Number of pages7
JournalPhysica B: Condensed Matter
Issue number8-11
StatePublished - 1 May 2009


  • Chemical conversion
  • Compound
  • Crystalline
  • X-ray diffraction


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