Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

Ching Chen Wu, Kong Wei Cheng, Wen Sheng Chang, Tai Chou Lee

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31 Scopus citations

Abstract

The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS2/AgIn5S8 crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm2 was obtained in contact with K2SO3 and Na2S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at λ = 500 nm.

Original languageEnglish
Pages (from-to)180-187
Number of pages8
JournalJournal of the Taiwan Institute of Chemical Engineers
Volume40
Issue number2
DOIs
StatePublished - Mar 2009

Keywords

  • Chemical synthesis
  • Electrochemical properties
  • Optical properties
  • Semiconductors
  • X-ray diffraction

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