Power-constrained third-order active notch filter applied in IR-LNA for UWB standards

Jui Yi Lin, Hwann Kaeo Chiou

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

This brief proposes a third-order active notch filter for an interferer-rejection (IR) ultrawideband low-noise amplifier (LNA) in a 0.18-μm complementary metal-oxide-semiconductor process. The design formulas are derived by considering the minimum power dissipation for the active notch filter that provides proper selections of the device size, the bias conditions, and the values of LC resonator. The active notch filter was then incorporated into a wideband common-gate LNA as an IR-LNA. The measurements show that the IR-LNA achieves a maximum gain of 14.7 dB, a minimum noise figure of 5.3 dB, an IR ratio of 35.7 dB, and an input third-order intercept point of -2.5 dBm at a 16-mW power dissipation, while the active notch filter rejects the interfering signal at 5.8 GHz. The chip area is 0.51 mm2, including testing pads.

Original languageEnglish
Article number5685263
Pages (from-to)11-15
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume58
Issue number1
DOIs
StatePublished - Jan 2011

Keywords

  • Active notch filter
  • complementary metal-oxide-semiconductor (CMOS)
  • interferer rejection (IR)
  • low-noise amplifier (LNA)
  • ultrawideband (UWB)

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