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Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs
E. R. Hsieh, Z. Y. Wang, Y. H. Ye, Y. S. Wu, C. F. Huang, P. S. Huang, Y. S. Huang, M. L. Miu, H. S. Su, S. Y. Huang, S. M. Lu
Research output: Contribution to journal › Article › peer-review