Positive-bias-temperature-instability Induced Random-trap-fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

E. R. Hsieh; Z. Y. Wang; Y. H. Ye; Y. S. Wu; C. F. Huang; P. S. Huang; Y. S. Huang; M. L. Miu; H. S. Su; S. Y. Huang; S. M. Lu

doi:10.1109/LED.2022.3188492

Positive-bias-temperature-instability Induced Random-trap-fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

E. R. Hsieh, Z. Y. Wang, Y. H. Ye, Y. S. Wu, C. F. Huang, P. S. Huang, Y. S. Huang, M. L. Miu, H. S. Su, S. Y. Huang, S. M. Lu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standarddeviation of the inter-and intra-Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography.

Original language	English
Pages (from-to)	1
Number of pages	1
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2022.3188492
State	Published - 1 Sep 2022

Keywords

FinFETs
Logic gates
Nonvolatile memory
Physical Unclonable Function
Physical unclonable function
Positive-biastemperature-instability
Random Trap Fluctuation
Silicon
Standards
Stress

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10.1109/LED.2022.3188492

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@article{38b3da4bef174607ab9f36d233490278,

title = "Positive-bias-temperature-instability Induced Random-trap-fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs",

abstract = "We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standarddeviation of the inter-and intra-Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography.",

keywords = "FinFETs, Logic gates, Nonvolatile memory, Physical Unclonable Function, Physical unclonable function, Positive-biastemperature-instability, Random Trap Fluctuation, Silicon, Standards, Stress",

author = "Hsieh, {E. R.} and Wang, {Z. Y.} and Ye, {Y. H.} and Wu, {Y. S.} and Huang, {C. F.} and Huang, {P. S.} and Huang, {Y. S.} and Miu, {M. L.} and Su, {H. S.} and Huang, {S. Y.} and Lu, {S. M.}",

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year = "2022",

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doi = "10.1109/LED.2022.3188492",

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T1 - Positive-bias-temperature-instability Induced Random-trap-fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

AU - Hsieh, E. R.

AU - Wang, Z. Y.

AU - Ye, Y. H.

AU - Wu, Y. S.

AU - Huang, C. F.

AU - Huang, P. S.

AU - Huang, Y. S.

AU - Miu, M. L.

AU - Su, H. S.

AU - Huang, S. Y.

AU - Lu, S. M.

N1 - Publisher Copyright: IEEE

PY - 2022/9/1

Y1 - 2022/9/1

N2 - We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standarddeviation of the inter-and intra-Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography.

AB - We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standarddeviation of the inter-and intra-Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography.

KW - FinFETs

KW - Logic gates

KW - Nonvolatile memory

KW - Physical Unclonable Function

KW - Physical unclonable function

KW - Positive-biastemperature-instability

KW - Random Trap Fluctuation

KW - Silicon

KW - Standards

KW - Stress

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U2 - 10.1109/LED.2022.3188492

DO - 10.1109/LED.2022.3188492

M3 - 期刊論文

AN - SCOPUS:85134229349

SN - 0741-3106

SP - 1

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Positive-bias-temperature-instability Induced Random-trap-fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

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Keywords

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