Abstract
In this paper, based on the Monte-Carlo ray tracing simulation we present the study of the light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer with several parameters, including chip dimensions, absorption coefficients and package. Besides, the light extraction efficient characteristic of a ThinGaN LED is studied.
Original language | English |
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Article number | 14 |
Pages (from-to) | 111-118 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5530 |
DOIs | |
State | Published - 2004 |
Event | Fourth International Conference on Solid State Lighting - Denver, CO, United States Duration: 3 Aug 2004 → 6 Aug 2004 |
Keywords
- GaN-based LED
- Light extraction efficiency
- Monte-Carlo ray tracing method
- ThinGaN