Polarization-enhanced Mg doping in InGaN/GaN superlattice for green light-emitting diodes

Hung Cheng Lin, Geng Yen Lee, Hsueh Hsing Liu, Nai Wei Hsu, Chin Chi Wu, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
PublisherIEEE Computer Society
ISBN (Print)9781557528698
DOIs
StatePublished - 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2 Jun 20094 Jun 2009

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period2/06/094/06/09

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