Polarization-enhanced mg doping in InGaN/GaN superlattice for green light-emitting diodes

Hung Cheng Lin, Geng Yen Lee, Hsueh Hsing Liu, Nai Wei Hsu, Chin Chi Wu, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period31/05/095/06/09

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