Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring

Chien Chieh Lee; Song Ho Wang; Hsueh Er Chang; Yiin Kuen Fuh; Tomi T. Li; Ya Hui Chiou; Hsin Chuan Cheng

doi:10.1109/CSTIC.2019.8755637

Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring

Chien Chieh Lee, Song Ho Wang, Hsueh Er Chang, Yiin Kuen Fuh, Tomi T. Li, Ya Hui Chiou, Hsin Chuan Cheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl₃) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl₃) and hydrogen (H₂) mixture gas.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2019, CSTIC 2019
Editors	Cor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538674437
DOIs	https://doi.org/10.1109/CSTIC.2019.8755637
State	Published - Mar 2019
Event	2019 China Semiconductor Technology International Conference, CSTIC 2019 - Shanghai, China Duration: 18 Mar 2019 → 19 Mar 2019

Publication series

Name	China Semiconductor Technology International Conference 2019, CSTIC 2019

Conference

Conference	2019 China Semiconductor Technology International Conference, CSTIC 2019
Country/Territory	China
City	Shanghai
Period	18/03/19 → 19/03/19

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10.1109/CSTIC.2019.8755637

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Lee, C. C., Wang, S. H., Chang, H. E., Fuh, Y. K., Li, T. T., Chiou, Y. H., & Cheng, H. C. (2019). Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring. In C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H.-L. Lung, & W. Yu (Eds.), China Semiconductor Technology International Conference 2019, CSTIC 2019 Article 8755637 (China Semiconductor Technology International Conference 2019, CSTIC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2019.8755637

Lee, Chien Chieh ; Wang, Song Ho ; Chang, Hsueh Er et al. / Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring. China Semiconductor Technology International Conference 2019, CSTIC 2019. editor / Cor Claeys ; Ru Huang ; Hanming Wu ; Qinghuang Lin ; Steve Liang ; Peilin Song ; Zhen Guo ; Kafai Lai ; Ying Zhang ; Xinping Qu ; Hsiang-Lan Lung ; Wenjian Yu. Institute of Electrical and Electronics Engineers Inc., 2019. (China Semiconductor Technology International Conference 2019, CSTIC 2019).

@inproceedings{e4b2bfe841d04445a3b60a534c4ea27c,

title = "Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring",

abstract = "The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl3) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl3) and hydrogen (H2) mixture gas.",

author = "Lee, {Chien Chieh} and Wang, {Song Ho} and Chang, {Hsueh Er} and Fuh, {Yiin Kuen} and Li, {Tomi T.} and Chiou, {Ya Hui} and Cheng, {Hsin Chuan}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 China Semiconductor Technology International Conference, CSTIC 2019 ; Conference date: 18-03-2019 Through 19-03-2019",

year = "2019",

month = mar,

doi = "10.1109/CSTIC.2019.8755637",

language = "???core.languages.en_GB???",

series = "China Semiconductor Technology International Conference 2019, CSTIC 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Cor Claeys and Ru Huang and Hanming Wu and Qinghuang Lin and Steve Liang and Peilin Song and Zhen Guo and Kafai Lai and Ying Zhang and Xinping Qu and Hsiang-Lan Lung and Wenjian Yu",

booktitle = "China Semiconductor Technology International Conference 2019, CSTIC 2019",

}

Lee, CC, Wang, SH, Chang, HE, Fuh, YK , Li, TT, Chiou, YH & Cheng, HC 2019, Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring. in C Claeys, R Huang, H Wu, Q Lin, S Liang, P Song, Z Guo, K Lai, Y Zhang, X Qu, H-L Lung & W Yu (eds), China Semiconductor Technology International Conference 2019, CSTIC 2019., 8755637, China Semiconductor Technology International Conference 2019, CSTIC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 China Semiconductor Technology International Conference, CSTIC 2019, Shanghai, China, 18/03/19. https://doi.org/10.1109/CSTIC.2019.8755637

Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring. / Lee, Chien Chieh; Wang, Song Ho; Chang, Hsueh Er et al.
China Semiconductor Technology International Conference 2019, CSTIC 2019. ed. / Cor Claeys; Ru Huang; Hanming Wu; Qinghuang Lin; Steve Liang; Peilin Song; Zhen Guo; Kafai Lai; Ying Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. Institute of Electrical and Electronics Engineers Inc., 2019. 8755637 (China Semiconductor Technology International Conference 2019, CSTIC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring

AU - Lee, Chien Chieh

AU - Wang, Song Ho

AU - Chang, Hsueh Er

AU - Fuh, Yiin Kuen

AU - Li, Tomi T.

AU - Chiou, Ya Hui

AU - Cheng, Hsin Chuan

PY - 2019/3

Y1 - 2019/3

N2 - The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl3) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl3) and hydrogen (H2) mixture gas.

AB - The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl3) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surface profiler and Fourier transform infrared spectroscopy were used to measure the film properties-thickness and chemical bonds. The role of chlorine and hydrogen in crystal formation is discussed in terms of surface chemistry through film deposition. It showed that higher deposition rate (> 0.3nm/sec) could be achieved with increasing input power and the surface termination species depend on the RF power level and flow rate of a trichlorosilane (SiHCl3) and hydrogen (H2) mixture gas.

UR - http://www.scopus.com/inward/record.url?scp=85069435430&partnerID=8YFLogxK

U2 - 10.1109/CSTIC.2019.8755637

DO - 10.1109/CSTIC.2019.8755637

M3 - 會議論文篇章

AN - SCOPUS:85069435430

T3 - China Semiconductor Technology International Conference 2019, CSTIC 2019

BT - China Semiconductor Technology International Conference 2019, CSTIC 2019

A2 - Claeys, Cor

A2 - Huang, Ru

A2 - Wu, Hanming

A2 - Lin, Qinghuang

A2 - Liang, Steve

A2 - Song, Peilin

A2 - Guo, Zhen

A2 - Lai, Kafai

A2 - Zhang, Ying

A2 - Qu, Xinping

A2 - Lung, Hsiang-Lan

A2 - Yu, Wenjian

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 China Semiconductor Technology International Conference, CSTIC 2019

Y2 - 18 March 2019 through 19 March 2019

ER -

Lee CC, Wang SH, Chang HE, Fuh YK , Li TT, Chiou YH et al. Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring. In Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W, editors, China Semiconductor Technology International Conference 2019, CSTIC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8755637. (China Semiconductor Technology International Conference 2019, CSTIC 2019). doi: 10.1109/CSTIC.2019.8755637

Plasma process optimization of silicon film deposition from trichlorosiliane precursor with OES monitoring

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