Plasma diagnostics of resonance magnetic field effects on a-Si:H thin films deposition using electron cyclotron resonance plasma

L. C. Hu, Y. W. Lin, C. J. Wang, T. C. Wei, C. R. Yang, C. C. Lee, J. Y. Chang, I. C. Chen, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study demonstrated the use of quadrupole mass spectrometer (QMS) and optical emission spectrometer (OES) in diagnosing plasma process of electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The result showed that, by adjusting main magnetic coil current in ECR-CVD system, the relationship between plasma chemical composition and magnetic field was discussed in this paper. As the results, by controlling appropriate magnetic field configuration, the characteristics of a-Si:H thin film such as photosensitive, microstructure and deposition rate could be improved.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2015, CSTIC 2015
EditorsCor Claeys, Qinghuang Lin, David Huang, Hanming Wu, Ru Huang, Kafei Lai, Ying Zhang, Beichao Zhang, Kuochun Wu, Larry Chen, Steve Liang, Peilin Song, Hsiang-Lan Lung, Dong Chen, Qi Wang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479972418
DOIs
StatePublished - 8 Jul 2015
Event2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China
Duration: 15 Mar 201516 Mar 2015

Publication series

NameChina Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference2015 China Semiconductor Technology International Conference, CSTIC 2015
Country/TerritoryChina
CityShanghai
Period15/03/1516/03/15

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