Planar light source by using side-emitting of GaN die with top and bottom reflector

Chi Shou Wu, Cheng Chien Chen, Ming Siou Tsai, Tsung Xian Lee, Ching Cherng Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Based on Monte Carlo ray tracing we present a study of GaN die with a reflective layer coated on a p-GaN surface inside the light guide as a planar light source. We simulated the lights extracted from the GaN die implanting pyramid microstructure on the top surface of sapphire or on the top surface of p-GaN. Micro pyramid array with different slanted angle from 5° to 85° is shown to effectively improve the light extraction efficiency. In addition, the pattern sapphire substrate with slanted angle of ten degrees is found to be an effective way to increase the lateral directionality than the surface texture.

Original languageEnglish
Title of host publicationCurrent Developments in Lens Design and Optical Engineering XIII
DOIs
StatePublished - 2012
EventCurrent Developments in Lens Design and Optical Engineering XIII - San Diego, CA, United States
Duration: 13 Aug 201215 Aug 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8486
ISSN (Print)0277-786X

Conference

ConferenceCurrent Developments in Lens Design and Optical Engineering XIII
Country/TerritoryUnited States
CitySan Diego, CA
Period13/08/1215/08/12

Keywords

  • GaN
  • Light extraction efficiency
  • Monte Carlo
  • P-GaN
  • Pattern sapphire substrate
  • Pyramid micro-structure
  • Surface texture

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