Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

J. W. Shi; Z. Y. Wu; F. M. Kuo

doi:10.1109/PHOTONICS.2010.5698789

Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

J. W. Shi, Z. Y. Wu, F. M. Kuo

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9V_br has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.

Original language	English
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	124-125
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698789
State	Published - 2010
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: 7 Nov 2010 → 11 Nov 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	7/11/10 → 11/11/10

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10.1109/PHOTONICS.2010.5698789

Cite this

Shi, J. W., Wu, Z. Y., & Kuo, F. M. (2010). Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 124-125). [5698789] (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698789

Shi, J. W. ; Wu, Z. Y. ; Kuo, F. M. / Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. pp. 124-125 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

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title = "Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation",

abstract = "We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.",

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Shi, JW, Wu, ZY & Kuo, FM 2010, Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698789, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 124-125, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 7/11/10. https://doi.org/10.1109/PHOTONICS.2010.5698789

Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation. / Shi, J. W.; Wu, Z. Y.; Kuo, F. M.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 124-125 5698789 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.

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Shi JW, Wu ZY, Kuo FM. Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 124-125. 5698789. (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). doi: 10.1109/PHOTONICS.2010.5698789

Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

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