Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

J. W. Shi, Z. Y. Wu, F. M. Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We demonstrate 10Gbit/sec planar InAlAs based separated-absorption- transport-charge-multiplication avalanche photodiodes with a large active diameter (∼50μm). By inserting InP transport layers, bandwidth- enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages124-125
Number of pages2
DOIs
StatePublished - 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 7 Nov 201011 Nov 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/TerritoryUnited States
CityDenver, CO
Period7/11/1011/11/10

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