Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

C. Y. Lai; T. M. Hsu; W. H. Chang; K. U. Tseng; C. M. Lee; C. C. Chuo; J. I. Chyi

doi:10.1002/1521-3951(200111)228:1<77::AID-PSSB77>3.0.CO;2-I

Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

C. Y. Lai, T. M. Hsu, W. H. Chang, K. U. Tseng, C. M. Lee, C. C. Chuo, J. I. Chyi

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Abstract

In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In_0.23Ga_0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<77::AID-PSSB77>3.0.CO;2-I
State	Published - Nov 2001

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title = "Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells",

abstract = "In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.",

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T1 - Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

AU - Lai, C. Y.

AU - Hsu, T. M.

AU - Chang, W. H.

AU - Tseng, K. U.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2001/11

Y1 - 2001/11

N2 - In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.

AB - In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.

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U2 - 10.1002/1521-3951(200111)228:1<77::AID-PSSB77>3.0.CO;2-I

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JF - Physica Status Solidi (B) Basic Research

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Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

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