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Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs
W. C. Lee, T. M. Hsu,
J. I. Chyi
Department of Electrical Engineering
Research output
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Contribution to journal
›
Article
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peer-review
3
Scopus citations
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Keyphrases
Gallium Arsenide
100%
Annealing Temperature
100%
Fermi Level
100%
Low-temperature-grown GaAs
100%
Photoreflectance
100%
Si-doped
100%
GaAs on Si
100%
Annealing
66%
Low Temperature
66%
Passivated
33%
Conduction Band
33%
Capping Layer
33%
Photovoltaic Effect
33%
Doped Layers
33%
Arsenic Precipitation
33%
Built-in Electric Field
33%
Temperature Cap
33%
Engineering
Gallium Arsenide
100%
Low-Temperature
100%
Doped Gaas
100%
Photoreflectance
100%
Fermi Level
75%
Annealing Temperature
50%
Arsenic
25%
Doped Layer
25%
Cap Layer
25%
Electric Field
25%
Conduction Band
25%
Photovoltaic Effect
25%