Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

W. C. Lee; T. M. Hsu; J. I. Chyi

doi:10.1016/S0169-4332(96)00834-3

Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

W. C. Lee, T. M. Hsu, J. I. Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoreflectance has been used to study the Fermi-level of annealed_ lovv temperature (200°C) grown GaAs which is passivated on Si-δ-doped GaAs. The Fermi-level of the samples are measured by the photovoltaic effect of the built-in electric field between the interface of the low temperature grown cap layer and the Si-δ-doped layer. The annealing temperature of the low temperature cap is 600-900°C. The Fermi-levels of annealed low temperature GaAs are found to decrease from 0.55 eV to 0.40 eV below the conduction band when the annealing temperatures are increased from 600°C to 900°C. These results are connected to the arsenic precipitation at the different annealed temperatures.

Original language	English
Pages (from-to)	515-518
Number of pages	4
Journal	Applied Surface Science
Volume	113-114
DOIs	https://doi.org/10.1016/S0169-4332(96)00834-3
State	Published - Apr 1997

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title = "Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs",

abstract = "Photoreflectance has been used to study the Fermi-level of annealed_ lovv temperature (200°C) grown GaAs which is passivated on Si-δ-doped GaAs. The Fermi-level of the samples are measured by the photovoltaic effect of the built-in electric field between the interface of the low temperature grown cap layer and the Si-δ-doped layer. The annealing temperature of the low temperature cap is 600-900°C. The Fermi-levels of annealed low temperature GaAs are found to decrease from 0.55 eV to 0.40 eV below the conduction band when the annealing temperatures are increased from 600°C to 900°C. These results are connected to the arsenic precipitation at the different annealed temperatures.",

author = "Lee, {W. C.} and Hsu, {T. M.} and Chyi, {J. I.}",

note = "Funding Information: The authors would like to thank the Optical Center of National Central University for the use of the MBE system. The work is supported in part by National Science Council of Republic of China under Grant No. NSC852112-M-008-025.",

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T1 - Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

AU - Lee, W. C.

AU - Hsu, T. M.

AU - Chyi, J. I.

N1 - Funding Information: The authors would like to thank the Optical Center of National Central University for the use of the MBE system. The work is supported in part by National Science Council of Republic of China under Grant No. NSC852112-M-008-025.

PY - 1997/4

Y1 - 1997/4

N2 - Photoreflectance has been used to study the Fermi-level of annealed_ lovv temperature (200°C) grown GaAs which is passivated on Si-δ-doped GaAs. The Fermi-level of the samples are measured by the photovoltaic effect of the built-in electric field between the interface of the low temperature grown cap layer and the Si-δ-doped layer. The annealing temperature of the low temperature cap is 600-900°C. The Fermi-levels of annealed low temperature GaAs are found to decrease from 0.55 eV to 0.40 eV below the conduction band when the annealing temperatures are increased from 600°C to 900°C. These results are connected to the arsenic precipitation at the different annealed temperatures.

AB - Photoreflectance has been used to study the Fermi-level of annealed_ lovv temperature (200°C) grown GaAs which is passivated on Si-δ-doped GaAs. The Fermi-level of the samples are measured by the photovoltaic effect of the built-in electric field between the interface of the low temperature grown cap layer and the Si-δ-doped layer. The annealing temperature of the low temperature cap is 600-900°C. The Fermi-levels of annealed low temperature GaAs are found to decrease from 0.55 eV to 0.40 eV below the conduction band when the annealing temperatures are increased from 600°C to 900°C. These results are connected to the arsenic precipitation at the different annealed temperatures.

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U2 - 10.1016/S0169-4332(96)00834-3

DO - 10.1016/S0169-4332(96)00834-3

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AN - SCOPUS:17544404049

SN - 0169-4332

VL - 113-114

SP - 515

EP - 518

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

Abstract

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