Photonic crystal cavity with double heterostructure in gan bulk

Yu Chieh Cheng; Dong Po Cai; Chii Chang Chen; Chia Hua Chan; Chien Chieh Lee; Ya Lun Tsai

doi:10.1109/JPHOT.2013.2280343

Photonic crystal cavity with double heterostructure in gan bulk

Yu Chieh Cheng, Dong Po Cai, Chii Chang Chen, Chia Hua Chan, Chien Chieh Lee, Ya Lun Tsai

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm². The Q-factor of the cavity is measured to be as high as 10⁴.

Original language	English
Article number	6588284
Journal	IEEE Photonics Journal
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/JPHOT.2013.2280343
State	Published - 2013

Keywords

GaN
Photonic Crystals
Q-factor
double heterostructure

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10.1109/JPHOT.2013.2280343

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abstract = "In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.",

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AU - Cheng, Yu Chieh

AU - Cai, Dong Po

AU - Chen, Chii Chang

AU - Chan, Chia Hua

AU - Lee, Chien Chieh

AU - Tsai, Ya Lun

PY - 2013

Y1 - 2013

N2 - In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.

AB - In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.

KW - GaN

KW - Photonic Crystals

KW - Q-factor

KW - double heterostructure

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VL - 5

JO - IEEE Photonics Journal

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Photonic crystal cavity with double heterostructure in gan bulk

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Keywords

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