Photonic crystal cavity with double heterostructure in gan bulk

Yu Chieh Cheng, Dong Po Cai, Chii Chang Chen, Chia Hua Chan, Chien Chieh Lee, Ya Lun Tsai

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/cm2. The Q-factor of the cavity is measured to be as high as 104.

Original languageEnglish
Article number6588284
JournalIEEE Photonics Journal
Issue number5
StatePublished - 2013


  • GaN
  • Photonic Crystals
  • Q-factor
  • double heterostructure


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