Photomodulation reflectance study of temperature dependence of the band gap of ZnSe 1-xO x

Wen Yen Chen; Chi Wen Lai; Chao Chia Cheng; Cheng Yu Chen; Jen Inn Chyi; Tzu Min Hsu

doi:10.1002/pssc.201100288

Photomodulation reflectance study of temperature dependence of the band gap of ZnSe _1-xO _x

Wen Yen Chen, Chi Wen Lai, Chao Chia Cheng, Cheng Yu Chen, Jen Inn Chyi, Tzu Min Hsu

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigated the band gap of ZnSe _1-xO _x alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe _1-xO _x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature.

Original language	English
Pages (from-to)	187-189
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	2
DOIs	https://doi.org/10.1002/pssc.201100288
State	Published - Feb 2012

Keywords

Band anticrossing
Photomodulation
ZnSeO band gap

Access to Document

10.1002/pssc.201100288

Cite this

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abstract = "We investigated the band gap of ZnSe 1-xO x alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe 1-xO x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature.",

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AU - Chen, Wen Yen

AU - Lai, Chi Wen

AU - Cheng, Chao Chia

AU - Chen, Cheng Yu

AU - Chyi, Jen Inn

AU - Hsu, Tzu Min

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AB - We investigated the band gap of ZnSe 1-xO x alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe 1-xO x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature.

KW - Band anticrossing

KW - Photomodulation

KW - ZnSeO band gap

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