Photomodulation reflectance study of temperature dependence of the band gap of ZnSe 1-xO x

Wen Yen Chen, Chi Wen Lai, Chao Chia Cheng, Cheng Yu Chen, Jen Inn Chyi, Tzu Min Hsu

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5 Scopus citations

Abstract

We investigated the band gap of ZnSe 1-xO x alloys (x =2.7% and 5.3%) by photomodulation reflectance spectroscopy from 10 K to 300 K. The temperature dependence of band gap of ZnSe 1-xO x exhibited slight deviation from the expectation of the band anticrossing model. The deviation was explained by the decrease of the anticrossing interaction between the oxygen states and conduction band at low temperature.

Original languageEnglish
Pages (from-to)187-189
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number2
DOIs
StatePublished - Feb 2012

Keywords

  • Band anticrossing
  • Photomodulation
  • ZnSeO band gap

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