Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5 As Quantum Dots on Vicinal GaAs Substrates

Nien Tze Yeh, Tzer En Nee, Po Wen Shiao, Mao Nan Chang, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journalConference articlepeer-review

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The properties of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In0.5Ga0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In0.5Ga0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number1 B
StatePublished - 1999
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 31 May 19984 Jun 1998


  • Atomic force microscopy
  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum dots
  • Vicinal substrates


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