Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

Hsu Sheng Tsai; Jhe Wei Liou; Icuk Setiyawati; Kuan Rong Chiang; Chia Wei Chen; Chi Chong Chi; Yu Lun Chueh; Hao Ouyang; Yu Hui Tang; Wei Yen Woon; Jenq Horng Liang

doi:10.1002/admi.201701619

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Hsu Sheng Tsai, Jhe Wei Liou, Icuk Setiyawati, Kuan Rong Chiang, Chia Wei Chen, Chi Chong Chi, Yu Lun Chueh, Hao Ouyang, Yu Hui Tang, Wei Yen Woon, Jenq Horng Liang

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The multilayer HfSe₂ on sapphire is first fabricated by the ion beam-assisted process combining ion implantation with the post annealing. The A_1g mode of HfSe₂ is shown in the Raman spectrum, the X-ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe₂. The six-layered (6L) octahedral HfSe₂ (1T-HfSe₂), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.

Original language	English
Article number	1701619
Journal	Advanced Materials Interfaces
Volume	5
Issue number	8
DOIs	https://doi.org/10.1002/admi.201701619
State	Published - 23 Apr 2018

Keywords

2D materials
ion implantation
metal chalcogenides
photoluminescence

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10.1002/admi.201701619

2 Finished

Defects in Two Dimensional Materials(1/3)
Woon, W.
1/08/17 → 31/07/18
Project: Research
Study in the Next-Generation Magnetic Memory with the High Field-Like Spin Torque Effect
Tang, Y.
1/08/17 → 31/07/18
Project: Research

Cite this

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title = "Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation",

abstract = "The multilayer HfSe2 on sapphire is first fabricated by the ion beam-assisted process combining ion implantation with the post annealing. The A1g mode of HfSe2 is shown in the Raman spectrum, the X-ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe2. The six-layered (6L) octahedral HfSe2 (1T-HfSe2), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.",

keywords = "2D materials, ion implantation, metal chalcogenides, photoluminescence",

author = "Tsai, {Hsu Sheng} and Liou, {Jhe Wei} and Icuk Setiyawati and Chiang, {Kuan Rong} and Chen, {Chia Wei} and Chi, {Chi Chong} and Chueh, {Yu Lun} and Hao Ouyang and Tang, {Yu Hui} and Woon, {Wei Yen} and Liang, {Jenq Horng}",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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month = apr,

day = "23",

doi = "10.1002/admi.201701619",

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volume = "5",

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Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation. / Tsai, Hsu Sheng; Liou, Jhe Wei; Setiyawati, Icuk; Chiang, Kuan Rong; Chen, Chia Wei; Chi, Chi Chong; Chueh, Yu Lun; Ouyang, Hao; Tang, Yu Hui ; Woon, Wei Yen; Liang, Jenq Horng.

In: Advanced Materials Interfaces, Vol. 5, No. 8, 1701619, 23.04.2018.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

AU - Tsai, Hsu Sheng

AU - Liou, Jhe Wei

AU - Setiyawati, Icuk

AU - Chiang, Kuan Rong

AU - Chen, Chia Wei

AU - Chi, Chi Chong

AU - Chueh, Yu Lun

AU - Ouyang, Hao

AU - Tang, Yu Hui

AU - Woon, Wei Yen

AU - Liang, Jenq Horng

PY - 2018/4/23

Y1 - 2018/4/23

N2 - The multilayer HfSe2 on sapphire is first fabricated by the ion beam-assisted process combining ion implantation with the post annealing. The A1g mode of HfSe2 is shown in the Raman spectrum, the X-ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe2. The six-layered (6L) octahedral HfSe2 (1T-HfSe2), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.

AB - The multilayer HfSe2 on sapphire is first fabricated by the ion beam-assisted process combining ion implantation with the post annealing. The A1g mode of HfSe2 is shown in the Raman spectrum, the X-ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe2. The six-layered (6L) octahedral HfSe2 (1T-HfSe2), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.

KW - 2D materials

KW - ion implantation

KW - metal chalcogenides

KW - photoluminescence

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U2 - 10.1002/admi.201701619

DO - 10.1002/admi.201701619

M3 - 期刊論文

AN - SCOPUS:85045731932

VL - 5

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 8

M1 - 1701619

ER -

Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

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Keywords

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Projects

Defects in Two Dimensional Materials(1/3)

Study in the Next-Generation Magnetic Memory with the High Field-Like Spin Torque Effect

Cite this

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation