Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

Sheng Hui Chen, Wei Ting Lin, Shih Hao Chan, Shao Ze Tseng, Chien Cheng Kuo, Sung Cheng Hu, Wan Hsuan Peng, Yung Tien Lu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min.

Original languageEnglish
Pages (from-to)P347-P350
JournalECS Journal of Solid State Science and Technology
Issue number9
StatePublished - 2015


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