Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

Sheng Hui Chen; Wei Ting Lin; Shih Hao Chan; Shao Ze Tseng; Chien Cheng Kuo; Sung Cheng Hu; Wan Hsuan Peng; Yung Tien Lu

doi:10.1149/2.0041509jss

Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

Sheng Hui Chen, Wei Ting Lin, Shih Hao Chan, Shao Ze Tseng, Chien Cheng Kuo, Sung Cheng Hu, Wan Hsuan Peng, Yung Tien Lu

Department of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min.

Original language	English
Pages (from-to)	P347-P350
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	9
DOIs	https://doi.org/10.1149/2.0041509jss
State	Published - 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.0041509jss

Cite this

@article{e00dc3ea6ab94a60ae8259dd347a01a9,

title = "Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells",

abstract = "In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min.",

author = "Chen, {Sheng Hui} and Lin, {Wei Ting} and Chan, {Shih Hao} and Tseng, {Shao Ze} and Kuo, {Chien Cheng} and Hu, {Sung Cheng} and Peng, {Wan Hsuan} and Lu, {Yung Tien}",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.",

year = "2015",

doi = "10.1149/2.0041509jss",

language = "???core.languages.en_GB???",

volume = "4",

pages = "P347--P350",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

number = "9",

}

TY - JOUR

T1 - Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

AU - Chen, Sheng Hui

AU - Lin, Wei Ting

AU - Chan, Shih Hao

AU - Tseng, Shao Ze

AU - Kuo, Chien Cheng

AU - Hu, Sung Cheng

AU - Peng, Wan Hsuan

AU - Lu, Yung Tien

PY - 2015

Y1 - 2015

N2 - In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min.

AB - In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150°C and 200°C, respectively. The results showed that the defect states (VSe and VCu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200°C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=84941072451&partnerID=8YFLogxK

U2 - 10.1149/2.0041509jss

DO - 10.1149/2.0041509jss

M3 - 期刊論文

AN - SCOPUS:84941072451

SN - 2162-8769

VL - 4

SP - P347-P350

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 9

ER -

Photoluminescence analysis of CdS/CIGS interfaces in CIGS solar cells

Abstract

UN SDGs

Access to Document

Fingerprint

Cite this