Photoelectric effect of hybrid ultraviolet-sensitized phototransistors from an n-type organic semiconductor and an all-inorganic perovskite quantum dot photosensitizer

Keyphrases

• Inorganic Perovskite Quantum Dots 100%
• Photosensitizer 100%
• N-type Semiconductor 100%
• Phototransistor 100%
• Photoelectric Effect 100%
• Hybrid Phototransistor 100%
• Fabrication Methods 50%
• Quantum Dots 50%
• Hybrid Method 50%
• Carrier Transport 50%
• Semiconductors 50%
• Absorptive Capacity 50%
• Solution Process 50%
• Photodetector 50%
• Volume Ratio 50%
• Sensing Materials 50%
• Light-stimulated 50%
• Photocarriers 50%
• Strong Light Absorption 50%
• UV Absorption Cross-sections 50%
• Bulk Heterojunction 50%
• Photodetection Performance 50%
• Transportability 50%
• Perovskite Quantum Dots 50%
• Transport Channel 50%
• Photodetection 50%
• Photosensing 50%
• High Photoresponsivity 50%
• Photoelectric Applications 50%
• Bandgap Tunability 50%
• Photodetectivity 50%
• CsPbBr3 Perovskite Quantum Dots 50%
• Photogating Effect 50%
• Channel Mixing 50%
• Solution-processed Fabrication 50%
• Relative Volume 50%
• Broad Bandgap 50%

Material Science

• Perovskite Quantum Dot 100%
• Photosensitizer 100%
• Quantum Dot 25%
• Carrier Transport 25%
• Heterojunction 25%
• Photosensor 25%

Chemical Engineering

• Semiconducting Organic Compound 100%
• Perovskites 100%