Abstract
We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.
Original language | English |
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Pages (from-to) | 269-272 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 275 |
DOIs | |
State | Published - 15 Jun 2013 |
Keywords
- HIT
- Photodetectors
- Solar cells