Photodetectors with an HIT structure on p-type crystalline Si wafers

C. H. Lin, T. H. Tsai, C. M. Wang, W. T. Yeh

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalApplied Surface Science
StatePublished - 15 Jun 2013


  • HIT
  • Photodetectors
  • Solar cells


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