Abstract
We report a photocurrent generation mechanism in the SnO 2 thin film surface layer by the charged chemisorption O ions on the SnO 2 thin film surface induced by O 2 -annealing. A critical build-in electric field in the SnO 2 surface layer resulted from the charged O ions on SnO 2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO 2 surface layer, which is the key for the photocurrent generation in the SnO 2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.
Original language | English |
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Pages (from-to) | 398-402 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 442 |
DOIs | |
State | Published - 1 Jun 2018 |
Keywords
- Chemisorption
- Photocurrent
- SnO thin film