Photocurrent generation in SnO 2 thin film by surface charged chemisorption O ions

Po Ming Lee, Ching Han Liao, Chia Hua Lin, Cheng Yi Liu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We report a photocurrent generation mechanism in the SnO 2 thin film surface layer by the charged chemisorption O ions on the SnO 2 thin film surface induced by O 2 -annealing. A critical build-in electric field in the SnO 2 surface layer resulted from the charged O ions on SnO 2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO 2 surface layer, which is the key for the photocurrent generation in the SnO 2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Original languageEnglish
Pages (from-to)398-402
Number of pages5
JournalApplied Surface Science
Volume442
DOIs
StatePublished - 1 Jun 2018

Keywords

  • Chemisorption
  • Photocurrent
  • SnO thin film

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