@article{010b52d8b0d0432d962f4560dda19119,
title = "Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light",
abstract = "We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure.",
keywords = "GaN light-emitting-diode (LED), White-light generation",
author = "Shi, {J. W.} and Huang, {H. Y.} and Wang, {C. K.} and Sheu, {J. K.} and Lai, {W. C.} and Wu, {Y. S.} and Chen, {C. H.} and Chu, {J. T.} and Kuo, {H. C.} and Lin, {Wei Ping} and Yang, {Tsung Hsun} and Chyi, {J. I.}",
note = "Funding Information: Manuscript received August 17, 2006; revised October 17, 2006. This work was supported in part by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-008. J.-W. Shi, H.-Y. Huang, C.-K. Wang, Y.-S. Wu, C.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Tainan 701, Taiwan, R.O.C. (e-mail:
[email protected];
[email protected]. tw). J.-K. Sheu and W.-C. Lai are with the Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C. (e-mail:
[email protected]). J.-T. Chu and H.-C. Kuo are with the Department of Photonics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. W.-P. Lin and T.-H. Yang are wih the Department of Optics and Photonics, National Central University, Taoyuan 320, Taiwan, R.O.C. Color versions of Figs. 1 and 2 are available at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2006.887362 Fig. 1. The conceptual band diagram and the adopted epi-layer structure of the demonstrated near-white-light LED. C.B. and V.B. indicate the conduction band and valence band, respectively.",
year = "2006",
month = dec,
day = "15",
doi = "10.1109/LPT.2006.887362",
language = "???core.languages.en_GB???",
volume = "18",
pages = "2593--2595",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "24",
}