P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J. W. Yang, Q. Chen

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

Original languageEnglish
Pages (from-to)193-195
Number of pages3
JournalElectronics Letters
Issue number2
StatePublished - 22 Jan 1998


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