P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington; Y. M. Hsin; Q. Z. Liu; P. M. Asbeck; S. S. Lau; M. Asif Khan; J. W. Yang; Q. Chen

doi:10.1049/el:19980091

P/He ion implant isolation technology for AlGaN/GaN HFETs

G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J. W. Yang, Q. Chen

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38 Scopus citations

Abstract

A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 10⁸Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

Original language	English
Pages (from-to)	193-195
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1049/el:19980091
State	Published - 22 Jan 1998

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abstract = "A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.",

author = "G. Hanington and Hsin, {Y. M.} and Liu, {Q. Z.} and Asbeck, {P. M.} and Lau, {S. S.} and {Asif Khan}, M. and Yang, {J. W.} and Q. Chen",

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T1 - P/He ion implant isolation technology for AlGaN/GaN HFETs

AU - Hanington, G.

AU - Hsin, Y. M.

AU - Liu, Q. Z.

AU - Asbeck, P. M.

AU - Lau, S. S.

AU - Asif Khan, M.

AU - Yang, J. W.

AU - Chen, Q.

PY - 1998/1/22

Y1 - 1998/1/22

N2 - A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

AB - A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

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DO - 10.1049/el:19980091

M3 - 期刊論文

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JO - Electronics Letters

JF - Electronics Letters

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P/He ion implant isolation technology for AlGaN/GaN HFETs

Abstract

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