Performance on test beam of the L3 double-sided silicon microstrip detector

A. Adam, O. Adriani, S. Ahlen, G. Ambrosi, E. Babucci, A. Baschirotto, R. Battiston, A. Bay, Gy L. Bencze, B. Bertucci, M. Biasini, G. M. Bilei, G. J. Bobbink, M. Bosetti, M. L. Brooks, J. Busenitz, W. J. Burger, C. Camps, M. Caria, G. CastelliniB. Checcucci, A. Chen, T. E. Coan, V. Commichau, D. DiBitonto, P. Duinker, S. Easo, P. Extermann, E. Fiandrini, A. Gougas, K. Hangarter, C. Hauviller, A. Herve, G. Hu, I. Josa, J. S. Kapustinski, D. Kim, W. W. Kinnison, V. R. Krastev, G. Landi, M. Lebeau, P. Lecomte, D. M. Lee, R. Leiste, W. T. Lin, W. Lohmann, A. Marin, R. Massetti, G. B. Mills, H. Nowak, G. Passaleva, T. Paul, M. Pauluzzi, S. Pensotti, E. Perrin, P. G. Rancoita, M. Rattaggi, A. Rosch, A. Santocchia, M. Sachwitz, P. Schmitz, B. Schöneich, L. Servoli, G. Susinno, G. Terzi, F. Tonisch, J. Toth, G. Trowitzsch, G. M. Viertel, H. Vogt, S. Waldmeier, J. Wegmann, R. Weill, S. C. Yeh, B. Zhou

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.

Original languageEnglish
Pages (from-to)436-439
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume348
Issue number2-3
DOIs
StatePublished - 1 Sep 1994

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