Abstract
Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ≥ 16 and a detection efficiency ≥ 99% are measured for both sides.
Original language | English |
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Pages (from-to) | 436-439 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 348 |
Issue number | 2-3 |
DOIs | |
State | Published - 1 Sep 1994 |