Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu, Yi Jen Chan, Rong Heng Yuang, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

Original languageEnglish
Pages (from-to)1692-1694
Number of pages3
JournalElectronics Letters
Issue number19
StatePublished - 14 Sep 1995


  • Gallium indium arsenide
  • Metal-semiconductor-metal structures
  • Photodetectors


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