Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu; Yi Jen Chan; Rong Heng Yuang; Jen Inn Chyi; Ching Ting Lee

doi:10.1049/el:19951131

Performance enhancement using WSi_x/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu, Yi Jen Chan, Rong Heng Yuang, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A thin (200Å) WSi_N film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

Original language	English
Pages (from-to)	1692-1694
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	19
DOIs	https://doi.org/10.1049/el:19951131
State	Published - 14 Sep 1995

Keywords

Gallium indium arsenide
Metal-semiconductor-metal structures
Photodetectors

Access to Document

10.1049/el:19951131

Cite this

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title = "Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors",

abstract = "A thin (200{\AA}) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.",

keywords = "Gallium indium arsenide, Metal-semiconductor-metal structures, Photodetectors",

author = "Chu, {Cheng Chung} and Chan, {Yi Jen} and Yuang, {Rong Heng} and Chyi, {Jen Inn} and Lee, {Ching Ting}",

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T1 - Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

AU - Chu, Cheng Chung

AU - Chan, Yi Jen

AU - Yuang, Rong Heng

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

PY - 1995/9/14

Y1 - 1995/9/14

N2 - A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

AB - A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

KW - Gallium indium arsenide

KW - Metal-semiconductor-metal structures

KW - Photodetectors

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DO - 10.1049/el:19951131

M3 - 期刊論文

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SN - 0013-5194

VL - 31

SP - 1692

EP - 1694

JO - Electronics Letters

JF - Electronics Letters

IS - 19