Abstract
A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.
Original language | English |
---|---|
Pages (from-to) | 1692-1694 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 19 |
DOIs | |
State | Published - 14 Sep 1995 |
Keywords
- Gallium indium arsenide
- Metal-semiconductor-metal structures
- Photodetectors