Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

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Physics & Astronomy