Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Fingerprint

Dive into the research topics of 'Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds