Performance enhancement by using the n⁺-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Keyphrases

• GaN HEMT 100%
• N-GaN 100%
• Performance Enhancement 100%
• GaN Cap Layer 100%
• Gate Recess 100%
• Contact Resistance 66%
• Undoped 66%
• Capping Layer 66%
• Gate Length 33%
• AlGaN Layer 33%
• RF Performance 33%
• Wide Bandgap 33%
• Fmax 33%
• Etching Technology 33%
• Band Gap Characteristics 33%
• Knee Voltage 33%
• Recess Etching 33%
• Low Mobility 33%
• Aluminum Gallium Nitride (AlGaN) 33%
• Output Power Density 33%

Engineering

• Cap Layer 100%
• Max 50%
• Output Power 25%
• Power Density 25%
• Gate Length 25%
• Band Gap 25%

Material Science

• Contact Resistance 100%
• Density 50%