Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n+-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n +-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an Ids,max of 1.1 A/mm, a gm,max of 220 mS/mm, an fT of 43 GHz, an fmax of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.

Original languageEnglish
Pages (from-to)5-7
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number1
DOIs
StatePublished - Jan 2005

Keywords

  • AlGaN-GaN HEMTs
  • Reactive ion etching (RIE) recess etching
  • n-GaN cap layer

Fingerprint

Dive into the research topics of 'Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication'. Together they form a unique fingerprint.

Cite this