@article{b444230f194044a09a7456a6b81212d2,
title = "Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication",
abstract = "Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this letter, we propose using the n+-GaN cap layer and the selective gate recess etching technology on the AlGaN-GaN HEMTs fabrication. With this n +-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance is reduced from 1.0 to 0.4 Ω · mm. The 0.3 μm gate-length device demonstrates an Ids,max of 1.1 A/mm, a gm,max of 220 mS/mm, an fT of 43 GHz, an fmax of 68 GHz, and an output power density of 4 W/mm at 2.4 GHz.",
keywords = "AlGaN-GaN HEMTs, Reactive ion etching (RIE) recess etching, n-GaN cap layer",
author = "Wang, {Wen Kai} and Lin, {Po Chen} and Lin, {Ching Huao} and Lin, {Cheng Kuo} and Chan, {Yi Jen} and Chen, {Guan Ting} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received July 29, 2004; revised October 27, 2004. This work was supported by the Ministry of Education under Contract 91-E-FA06-1-4, and by the Ministry of Economic Affairs under Contract 91-EC-2-A-17-0285-029. The review of this letter was arranged by T. Mizutani. The authors are with the Department of Electrical Engineering, National Central University, Chungli 32054 Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2004.840395 Fig. 1. Device cross-sectional structures of the recessed and conventional AlGaN–GaN HEMTs.",
year = "2005",
month = jan,
doi = "10.1109/LED.2004.840395",
language = "???core.languages.en_GB???",
volume = "26",
pages = "5--7",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "1",
}