Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication

Wen Kai Wang, Po Chen Lin, Ching Huao Lin, Cheng Kuo Lin, Yi Jen Chan, Guan Ting Chen, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review


Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN/GaN HEMT as a cap layer, the dc and rf performances of the device will be limited by its disadvantages of high ohmic contact resistance and high knee voltage. In this study, we proposed by using the n+-GaN cap layer and the selective gate recess etching technology for the AlGaN/GaN HEMTs fabrication. With this n+-GaN instead of the undoped AlGaN as a cap layer, the device contact resistance can be reduced from 1.0 Ω-mm to 0.4 Ω-mm. The recessed device demonstrated an I ds,max of 1.03 A/mm, a gm, max of 220 mS/mm, an f T of 26 GHz, an fmax of 50 GHz, and an output power density of 2.6 W/mm at 2.4 GHz.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalInstitute of Physics Conference Series
StatePublished - 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 12 Sep 200416 Dec 2004


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