Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array

Hsin Ying Lee, Ying Hao Ju, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, Al0.83 In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax ) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

Original languageEnglish
Article number42
JournalMaterials
Volume15
Issue number1
DOIs
StatePublished - 1 Jan 2022

Keywords

  • Double-channel epitaxial structure
  • Double-hump transconductance
  • GaO gate oxide layer
  • Metal–oxide–semiconductor high-electron mobility transistors

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