Abstract
Two simple methods that allow clean patterning of semiconducting polymers for thin film transistors (TFT) without compromising device performance, was studied. The methods employ selective physical delamination instead of chemical patterning or etching processes. The polymer poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) (PBTTT)-C14 was synthesized with a number average molecular mass (Mr) and polydispersity. The bottom contact Au electrodes for PBTTT top gate devices were patterned by photolithography with 3-mercaptopropyltrimethoxysilane as an adhesion layer between the Corning 7059 glass substrate and Au electrodes. A hexamethyldisilazane (HMDS) monolayer was deposited on a Si/SiC2 substrate by spin coating HMDS at 1000 rpm for 60s and then baking at 100°C for 5mm for the second method. The PI was diluted in 1 methyl 2 pyrolidinone (NMP) with a ratio of 2:1 and spin coated at 5000 rpm for 3mm. These two patterning methods might provide high-resolution but low-cost patterning of high performance polymer semiconducting films for a range of practical applications.
Original language | English |
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Pages (from-to) | 2530-2535 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 21 |
Issue number | 24 |
DOIs | |
State | Published - 26 Jun 2009 |