Pattern of x-ray scattering by thermal phonons in si

Z. Wu; Hawoong Hong; R. Aburano; P. Zschack; P. Jemian; J. Tischler; Haydn Chen; D. A. Luh; T. C. Chiang

doi:10.1103/PhysRevB.59.3283

Pattern of x-ray scattering by thermal phonons in si

Z. Wu
, Hawoong Hong
, R. Aburano
, P. Zschack
, P. Jemian
, J. Tischler
, Haydn Chen
, D. A. Luh
, T. C. Chiang

Department of Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

Original language	English
Pages (from-to)	3283-3286
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.59.3283
State	Published - 1999

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10.1103/PhysRevB.59.3283

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title = "Pattern of x-ray scattering by thermal phonons in si",

abstract = "Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.",

author = "Z. Wu and Hawoong Hong and R. Aburano and P. Zschack and P. Jemian and J. Tischler and Haydn Chen and Luh, \{D. A.\} and Chiang, \{T. C.\}",

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T1 - Pattern of x-ray scattering by thermal phonons in si

AU - Wu, Z.

AU - Hong, Hawoong

AU - Aburano, R.

AU - Zschack, P.

AU - Jemian, P.

AU - Tischler, J.

AU - Chen, Haydn

AU - Luh, D. A.

AU - Chiang, T. C.

PY - 1999

Y1 - 1999

N2 - Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

AB - Intensity distribution of x-ray scattering by thermal phonons in Si was recorded using synchrotron undulator radiation. A high-energy beam sent through a Si(111) wafer in a transmission Laue geometry yielded a threefold symmetric pattern for the scattering cross section with rich details governed by phonon dispersion, population, and polarization.

UR - https://www.scopus.com/pages/publications/0001764243

U2 - 10.1103/PhysRevB.59.3283

DO - 10.1103/PhysRevB.59.3283

M3 - 期刊論文

AN - SCOPUS:0001764243

SN - 1098-0121

VL - 59

SP - 3283

EP - 3286

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 5

ER -

Pattern of x-ray scattering by thermal phonons in si

Abstract

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